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Obvod: KBE00500AM [FBGA137]

Výrobca: Samsung

Popis čísla dielu pre toto zariadenie:

Nabehnutím kurzora zvýraznite konkrétnu sekciu
KB Samsung MCP(4 chip) Memory  
X Small Classification A = Mi NOR+Mi NOR+UtRAM+SRAM
B = NOR+NOR+NAND+UtRAM
C = NAND+UtRAM+UtRAM+SRAM
D = NOR+NAND+SDRAM+SDRAM
E = NAND+NAND+SDRAM+SDRAM
F = NOR+NOR+UtRAM+UtRAM
G = NOR+NOR+OneNAND+UtRAM
H = NOR+OneNAND+UtRAM+UtRAM
J = NOR+OneNAND+OneNAND+UtRAM
K = NOR+NOR+NOR+OneNAND
L = I NOR+I NOR+NAND+NAND
M = NOR+NOR+OneNAND+SDRAM
N = OneNAND+OneNAND+SDRAM+SDRAM
P = NAND+OneNAND+SDRAM+SDRAM
R = OneNAND+OneNAND+OneNAND+SDRAM
S = NOR+OneNAND+OneNAND+SDRAM
XX NOR Flash Density & Vcc & Org. & BB 00 = None
01 = 64M*2, Vcc=3.0V, x16, Bank: 4/4/28/28, Bottom boot block
02 = 64M*2, Vcc=3.0V, x16, Bank: 4/4/28/28, Top boot block
03 = 64M*2, Vcc=3.0V, x16, Bank: 4/4/28/28, Bottom/Top boot block
04 = 64M*2, Vcc=3.0V, x16, Bank: 4/4/28/28, Top/Bottom boot block
05 = 64M*2, Vcc=3.0V, x8/x16, Bank: 48/16,48/16, Bottom boot block
06 = 64M*2, Vcc=3.0V, x8/x16, Bank: 16/48,16/48, Top boot block
07 = 64M, Vcc=3.0V, x16, Bank: 16/48, Bottom boot block
08 = 128M*2, Vcc=1.8V, Vccq=1.8V, x16, Bank:8Mb*16*2, Bottom boot block
09 = 128M*2, Vcc=1.8V, Vccq=1.8V, x16, Bank: 8Mb*16*2, Top boot block
10 = 256M, Vcc=1.8V, Vccq=1.8V, x16 burst, Bank: 16Mb*16, Top boot block
11 = 256M, Vcc=1.8V, Vccq=1.8V, x16 burst, Bank: 16Mb*16, Bottom boot block
12 = 256M*2, Vcc=1.8V, Vccq=1.8V, x16 burst, Bank: 16Mb*16, Top boot block
13 = 256M*2, Vcc=1.8V, Vccq=1.8V, x16 burst, Bank: 16Mb*16, Bottom boot block
15 = Intel 256M*2, Vcc=1.8V, Vccq=1.8V, x16 burst, Bank: 16Mb*16, Bottom/Top boot block
16 = 256M, Vcc=1.8V, Vccq=1.8V, x16, Bank: 16Mb*16, Top boot block
17 = 256M, Vcc=1.8V, Vccq=1.8V, x16, Bank: 16Mb*16, Bottom boot block
18 = 256M*3, Vcc=1.8V, Vccq=1.8V, x16, Bank: 16Mb*16, Bottom/Top/Top boot block
19 = 256M*3, Vcc=1.8V, Vccq=1.8V, x16 muxed, Bank: 16Mb*16, Bottom/Top/Bottom boot block
20 = 256M*2, Vcc=1.8V, Vccq=1.8V, x16, Bank: 16Mb*16, Botom/Top boot block
21 = 128M, Vcc=1.8V, Vccq=1.8V, x16, Bank: 16Mb*16 muxed, Top boot block
X NAND Flash Density & Vcc & Org. 0None
A = 128M, Vcc=3.0V, Vccq=3.0V, x16
B = 256M, Vcc=3.0V, Vccq=3.0V, x16
C = 256M*2, Vcc=3.0V, Vccq=3.0V, x16
D = 256M*2, Vcc=1.8V, Vccq=1.8V, x16
E = 512M One, Vcc=1.8V, Vccq=1.8V, x16
F = 512M*2, Vcc=2.65V, Vccq=2.65V, x8
H = 1G*2, Vcc=1.8V, Vccq=1.8V, x8
G = 512M*2, Vcc=1.8V, Vccq=1.8V, x8
J = 512M*2, Vcc=3.0V, Vccq=3.0V, x8
K = 512M One*2, Vcc=1.8V, Vccq=1.8V, x16
L = 256M*2, Vcc=3.0V, Vccq=3.0V, x8
M = 256M*2, Vcc=2.65V, Vccq=2.65V, x16
N = 512M*2, Vcc=1.8V, Vccq=1.8V, x8
P = 1G, Vcc=1.8V, Vccq=1.8V, x8
R = 512M One, Vcc=1.8V, Vccq=1.8V, x16, Muxed
S = 1G*2, Vcc=2.65V, Vccq=2.65V, x8, SB
T = 1G, Vcc=1.8V, Vccq=1.8V, x16, Muxed
U = 1G*2, Vcc=3.0V, Vccq=3.0V, x16, 1CS
V = 1G OneNAND*2, Vcc=1.8V, Vccq=1.8V, x16
W = 512M NAND+1G OneNAND, Vcc=1.8V, Vccq=1.8V, x8/x16
X = 512 NAND + 512M OneNAND, Vcc=1.8V, Vccq=1.8V, x8/x16
Y = 1G OneNAND*3, Vcc=1.8V, Vccq=1.8V, x16
X UtRAM Density & Vcc & Org. 0None
1 = 32M, Vcc=3.0V, Vccq=3.0V, x16
3 = 32M, Vcc=3.0V, Vccq=3.0V, x16, Page
4 = 64M, Vcc=3.0V, Vccq=3.0V, x16
5 = 64M, Vcc=3.0V, Vccq=3.0V, x16, Page
6 = 64M+32M, Vcc=3.0V, Vccq=3.0V, x16
7 = 64M*2, Vcc=3.0V, Vccq=3.0V, x16, Page
8 = 64M*2, Vcc=2.6V, Vccq=1.8V, x16, Burst
9 = 64M, Vcc=3.0V, Vccq=1.8V, x16
A = 128M*2, Vcc=1.8V, Vccq=1.8V, x16, Burst, 2CS
B = 128M, Vcc=1.8V, Vccq=1.8V, x16, Burst
C = 128M, Vcc=1.8V, Vccq=1.8V, x16, Burst
D = 128M*2, Vcc=1.8V, Vccq=1.8V, x16, Burst, 1CS
E = 128M*2, Vcc=1.8V, Vccq=1.8V, x16, Page, 1CS
Z = 64M, Vcc=3.0V, Vccq=3.0V, x16, PRAM
X SDRAM density & Vcc & Org. 0None
A = 8M, Vcc=3.0V, x16
X DRAM I/F Density & Vcc & Org. 0None
1 = SDRAM, 128M, Vcc=3.0V, Vccq=3.0V, x16
2 = SDRAM, 128M*2, Vcc=1.8V, Vccq=1.8V, x32
3 = SDRAM, 256M*2, Vcc=1.8V, Vccq=1.8V, x16
4 = MDDR, 256M*2, Vcc=1.8V, Vccq=1.8V, x32, 2CS
5 = MSDR, 256M*2, Vcc=1.8V, Vccq=1.8V, x32, 2CS
6 = MSDR, 256M*2, Vcc=3.0V, Vccq=3.0V, x16
7 = MDDR, 256M*2, Vcc=2.5V, Vccq=2.5V, x32
8 = MDDR, 512M, Vcc=1.8V, Vccq=1.8V, x16
9 = MSDR, 256M*2, Vcc=1.8V, Vccq=1.8V, x32, 1CS, 1CK
A = MSDR, 512M*2, Vcc=1.8V, Vccq=1.8V, x32, 1CS
B = MSDR, 256M*2, Vcc=2.5V, Vccq=2.5V, x32, 2CS
C = MDDR, 512M*2, Vcc=1.8V, Vccq=1.8V, x32
D = M-SDR, 512M*2, Vcc=1.8V, Vccq=1.8V, x32, 2CS
E = M-SDR, 512M, Vcc=1.8V, Vccq=1.8V, x32
F = SDRAM, 128M, Vcc=1.8V, Vccq=1.8V, x16
X Generation M = 1st generation
A = 2nd generation
B = 3rd generation
C = 4th generation
D = 5th generation
E = 6th generation
F = 7th generation
G = 8th generation
X Package Type D = FBGA (Lead-free)
E = LGA(No ball)
F = FBGA
G = LGA (Lead-free)
P = FBGA (OSP)
S = FBGA (OSP Lead-free)
T = TBGA
XXX Speed 401 = 85ns, 85ns, 85ns, 55ns
402 = 70ns, 70ns, 50ns, 70ns
403 = 50ns, 70ns, 85ns, 55ns
404 = 50ns, 70ns, 70ns, 70ns
405 = 50ns, 70ns, 70ns, 55ns
406 = 70ns, 50ns, 50ns, 10ns
407 = 50ns, 50ns, 15ns, 15ns
409 = 50ns, 50ns, 9.5ns, 9.5ns
410 = 70ns, 70ns, 76ns, 70ns
411 = 50ns, 50ns, 9ns, 9ns
412 = 12ns, 50ns, 15ns, 15ns
413 = 50ns, 50ns, 7.5ns, 7.5ns
414 = 18.5ns, 18.5ns, 15ns, 15ns
415 = 50ns, 50ns, 6ns, 6ns
416 = 15ns, 18.5ns, 18.5ns, 15ns
417 = 14ns, 14ns, 50ns, 50ns
418 = 80ns, 70ns, 76ns, 70ns
419 = 18.5ns, 18.5ns, 18.5ns, 18.5ns
420 = 15ns, 15ns, 15ns, 15ns
421 = 80ns, 70ns, 70ns, 70ns
422 = 18.5ns, 18.5ns, 18.5ns, 9ns
423 = 18.5ns, 18.5ns, 6ns, 6ns
424 = 60ns, 18.5ns, 7.5ns, 7.5ns
425 = 18.5ns, 18.5ns, 7.5ns, 7.5ns
426 = 18.5ns, 18.5ns, 8.6ns, 8.6ns
427 = 76ns, 76ns, 76ns, 9ns
428 = 15ns, 18ns, 18ns, 7.5ns
429 = 60ns, 60ns, 9ns, 9ns
999 = Daisychain
X Packing Type T = Tape&Reel
Number = Other (Tray, Tube, Jar)
S = Stack
XX Customer "Customer List Reference"  

Poznámka: Tabuľka popisu čísla dielu popisuje bežný systém číslovania dielov pre viac čipov, preto môže táto tabuľka obsahovať informácie, ktoré nemusia byť platné pre aktuálne vybraný čip. Tu uvedené informácie sú poskytované na základe maximálneho úsilia a môžu byť nepresné alebo neúplné. Preto vždy skontrolujte najnovší technický list čipu, kde nájdete detailný popis čísla dielu. Ak nájdete nejakú nepresnosť, dajte nám vedieť.

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