Obvod: JW948 [FBGA162]
Výrobca: Micron
Popis čísla dielu pre toto zariadenie:
Nabehnutím kurzora zvýraznite konkrétnu sekciu| MT | Micron Technology | |
| XXXZ* | Product Family | 29C = SLC NAND + LPDDR (MCP/PoP) 29D = SLC NAND + LPDDR + MLC e-MMC (MCP/PoP) 29J = LPDDR + SLC e-MMC 29K = LPDDR + MLC e-MMC 29M = LPDDR2-S4 + SLC e-MMC 29P = LPDDR2-S4 + MLC e-MMC 29Q = SLC e-MMC + MLC e-MMC (MCP/PoP) 29R = LPDDR2-S4 + SLC NAND 29T = LPDDR3-S4 + MLC e-MMC 29U = LPDDR3-S4 + SLC NAND 29V = LPDDR-S4 + MLC/TLC e-MMC/UFS *Z = is used as a placeholder character |
| X | NAND Flash Density | T = 768Mbit U = 640Mbit V = 512Mbit W = 256Mbit X = 128Mbit Y = 64Mbit 1 = 1Gbit 2 = 2Gbit 3 = 3Gbit 4 = 4Gbit 6 = 6Gbit 7 = 7Gbit 8 = 8Gbit 9 = 12Gbit A = 16Gbit B = 48Gbit C = 64Gbit *Z = is used a placeholder character |
| X | NAND Flash Width | A = x4 B = x8 C = x16 D = x32 E = x64 F = x96 *Z = is used as a placeholder character |
| X | LPDRAM Density | T = 768Mbit U = 640Mbit V = 512Mbit W = 256Mbit X = 128Mbit Y = 64Mbit 1 = 1Gbit 2 = 2Gbit 3 = 3Gbit 4 = 4Gbit 6 = 6Gbit 7 = 7Gbit 8 = 8Gbit 9 = 12Gbit A = 16Gbit B = 48Gbit C = 64Gbit *Z = is used as a placeholder character |
| X | LPDRAM Width | A = x4 B = x8 C = x16 D = x32 E = x64 F = x96 *Z = is used as a placeholder character |
| X | e-MMC Density | V = 512MByte W = 256MByte X = 128MByte Y = 64MByte 1 = 1GByte 2 = 2GByte 4 = 4GByte 5 = 8GByte 6 = 16GByte 7 = 32GByte 8 = 64GByte 9 = 128GByte A = 256GByte B = 512GByte *Z = is used as a placeholder character |
| X | e-MMC Controller Version | A = e-MMC version 4.41 PL_REG B = e-MMC version 4.51 DC PL_REG C = e-MMC version 4.41 DC PL_REG D = e-MMC E = e-MMC version 5.1 F = e-MMC version 1.3 H = e-MMC version 1.8 J = e-MMC version 5.0 K = e-MMC version 4.2 L = e-MMC version 4.2/4.3 M = e-MMC version 4.2/4.3 N = e-MMC version 4.4 P = e-MMC version 4.4 Q = e-MMC version 4.4 R = e-MMC version 4.41 S = e-MMC version 4.41 T = e-MMC version 4.41 U = e-MMC version 4.41 V = e-MMC version 4.5 W = e-MMC version 4.5 X = e-MMC version 4.41 Y = e-MMC version 5.0 *Z |
| X | Operating Voltage Range | A = NAND: Vcc=N/A; LPDRAM: Vdd=1.8V, Vddq=1.8V; e-MMC: Vccm=1.8V, Vccqm=1.8V B = NAND: Vcc=1.8V; LPDRAM: Vdd=1.8V, Vddq=1.2V; e-MMC: Vccm=1.8V, Vccqm=1.8V C = NAND: Vcc=1.8V; LPDRAM: Vdd=1.35V, Vddq=1.2V; e-MMC: Vccm=1.8V, Vccqm=1.8V D = NAND: Vcc=1.8V; LPDRAM: Vdd=1.2V, Vddq=1.2V; e-MMC: Vccm=1.8V, Vccqm=1.8V E = NAND: Vcc=1.8; LPDRAM: Vdd=1.8V, Vddq=1.8V; e-MMC: Vccm=3.3V, Vccqm=1.8/3.3V F = NAND: Vcc=1.8V; LPDRAM: Vdd=1.8V, Vddq=1.8V; e-MMC: Vccm=1.8V, Vccqm=1.8V G = NAND: Vcc=N/A; LPDRAM: Vdd=1.8V, Vddq=1.8V; e-MMC: Vccm=3.3V, Vccqm=1.8/3.3V H = NAND: Vcc=1.8V; LPDRAM: Vdd=1.2V, Vddq=1.2V; e-MMC: Vccm=N/A, Vccqm=N/A J = NAND: Vcc=N/A; LPDRAM: Vdd=1.2V, Vddq=1.2V; e-MMC: Vccm=1.8V, Vccqm=1.8V K = NAND: Vcc=N/A; LPDRAM: Vdd=1.2V, Vddq=1.2V; e-MMC: Vccm=3.3V, Vccqm=1.8/3.3V L = NAND: Vcc=N/A; LPDRAM: Vdd=N/A, Vddq=1.2V; e-MMC: Vccm=1.8V, Vccqm=1.8/3.3V M = NAND: Vcc=1.8V; LPDRAM: Vdd=1.8V, Vddq=1.2V; e-MMC: Vccm=1.8V, Vccqm=N/A N = NAND: Vcc=3.3V; LPDRAM: Vdd=1.2V, Vddq=1.2V; e-MMC: Vccm=N/A, Vccqm=N/A P = NAND: VCC=N/A; LPDRAM: VDD=1.1V, VDDQ=1.1V, e-MMC: VCCM=3.3V, VCCQM = 1.8V Q = NAND: VCC=N/A; LPDRAM: VDD=1.1V, VDDQ=0.6V, e-MMC: VCCM=3.3V, VCCQM = 1.8V R = NAND: VCC=N/A; LPDRAM: VDD=1.1V, VDDQ=0.4V, e-MMC: VCCM=3.3V, VCCQM = 1.8V |
| X | Chip Count | A = 1 NAND Flash (CE#0); 1 LPDRAM; 1 e-MMC B = 2 NAND Flash (CE#0); 1 LPDRAM; 1 e-MMC C = 1 NAND Flash (CE#0); 2 LPDRAM (CS0#0)/CS1#; 1 e-MMC D = 2 NAND Flash (CE#0); 2 LPDRAM (CS0#/CS1#); 1 e-MMC E = 0 NAND Flash; 1 LPDRAM; 1 e-MMC F = 0 NAND Flash; 2 LPDRAM (CS0#/CS1#); 1 e-MMC G = 1 NAND Flash; 1 LPDRAM; 0 e-MMC H = 1 NAND Flash; 2 LPDRAM; 0 e-MMC I = 2 NAND Flash; 2 LPDRAM; 0 e-MMC J = 0 NAND Flash; 0 LPDRAM; 2 e-MMC K = 0 NAND Flash; 4 LPDRAM; 1 e-MMC L = 0 NAND Flash; 3 LPDRAM; 1 e-MMC M = 2 NAND Flash; 1 LPDRAM; 0 e-MMC N = 4 NAND Flash; 4 LPDRAM, 0 e-MMC O = 0 NAND Flash, 6 LPDRAM; 1 e-MMC |
| XX | Packge Code | Contact factory |
| X | LPDRAM Speed Grade | 046 = 2133MHz (LPDDR 4266) 062 = 1600MHz (LPDDR 3200) 107 = 933MHz (LPDDR 1866) 125 = 800MHz (LPDDR1600) 18 = 533MHz CL8 (LPDDR 1066) 25 = 400MHz CL6 (LPDDR 800) 3 = 333MHz CL5 (LPDDR 667) 37 = 266MHz CL4 (LPDDR 533) 5 = 200MHz CL3 (LPDDR 400) 53 = 1866MHz (LPDDR 3732) 54 = 128MHz CL3 (LPDDR 1) 6 = 166MHz CL3 (LPDDR 333) 75 = 133MHz CL3 (LPDDR 266) |
| X | Operating Temperature Range | A = Automotive (-40°C to 105°C) I = Industrial (-40°C to 85°C) W = Wireless (-25°C to 85°C) |
| X | Special Options | Blank = Standard A = Customer variant B = 2MB boot area / 2MB RPMB E = On-die ECC enabled F = SEC COUNT / custom boot area / custom RPBM |
| XX | Production Status | Blank = Production ES = Engineering samples MS = Mechanical samples |
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| XXX | Die Revision Code | Contact factory |
Poznámka: Tabuľka popisu čísla dielu popisuje bežný systém číslovania dielov pre viac čipov, preto môže táto tabuľka obsahovať informácie, ktoré nemusia byť platné pre aktuálne vybraný čip. Tu uvedené informácie sú poskytované na základe maximálneho úsilia a môžu byť nepresné alebo neúplné. Preto vždy skontrolujte najnovší technický list čipu, kde nájdete detailný popis čísla dielu. Ak nájdete nejakú nepresnosť, dajte nám vedieť.
vrátiť späť na zoznam výsledkovPodporovaný programátormi a programovacími adaptérmi/modulmi:
| BeeHive204 | adaptér/modul: DIL48/FBGA162-1 ZIF-CS NAND-1 (70-3114) |
| BeeHive208S | adaptér/modul: DIL48/FBGA162-1 ZIF-CS NAND-1 (70-3114) |
| BeeProg2 | adaptér/modul: DIL48/FBGA162-1 ZIF-CS NAND-1 (70-3114) |
| BeeProg2C | adaptér/modul: DIL48/FBGA162-1 ZIF-CS NAND-1 (70-3114) |
