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Device: JWB12 [VFBGA162]

Manufacturer: Micron

Part number description for this device:

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MT Micron Technology  
XXXZ* Product Family 29C = SLC NAND + LPDDR (MCP/PoP)
29D = SLC NAND + LPDDR + MLC e-MMC (MCP/PoP)
29J = LPDDR + SLC e-MMC
29K = LPDDR + MLC e-MMC
29M = LPDDR2-S4 + SLC e-MMC
29P = LPDDR2-S4 + MLC e-MMC
29Q = SLC e-MMC + MLC e-MMC (MCP/PoP)
29R = LPDDR2-S4 + SLC NAND
29T = LPDDR3-S4 + MLC e-MMC
29U = LPDDR3-S4 + SLC NAND
29V = LPDDR-S4 + MLC/TLC e-MMC/UFS
*Z = is used as a placeholder character
X NAND Flash Density T = 768Mbit
U = 640Mbit
V = 512Mbit
W = 256Mbit
X = 128Mbit
Y = 64Mbit
1 = 1Gbit
2 = 2Gbit
3 = 3Gbit
4 = 4Gbit
6 = 6Gbit
7 = 7Gbit
8 = 8Gbit
9 = 12Gbit
A = 16Gbit
B = 48Gbit
C = 64Gbit
*Z = is used a placeholder character
X NAND Flash Width A = x4
B = x8
C = x16
D = x32
E = x64
F = x96
*Z = is used as a placeholder character
X LPDRAM Density T = 768Mbit
U = 640Mbit
V = 512Mbit
W = 256Mbit
X = 128Mbit
Y = 64Mbit
1 = 1Gbit
2 = 2Gbit
3 = 3Gbit
4 = 4Gbit
6 = 6Gbit
7 = 7Gbit
8 = 8Gbit
9 = 12Gbit
A = 16Gbit
B = 48Gbit
C = 64Gbit
*Z = is used as a placeholder character
X LPDRAM Width A = x4
B = x8
C = x16
D = x32
E = x64
F = x96
*Z = is used as a placeholder character
X e-MMC Density V = 512MByte
W = 256MByte
X = 128MByte
Y = 64MByte
1 = 1GByte
2 = 2GByte
4 = 4GByte
5 = 8GByte
6 = 16GByte
7 = 32GByte
8 = 64GByte
9 = 128GByte
A = 256GByte
B = 512GByte
*Z = is used as a placeholder character
X e-MMC Controller Version A = e-MMC version 4.41 PL_REG
B = e-MMC version 4.51 DC PL_REG
C = e-MMC version 4.41 DC PL_REG
D = e-MMC
E = e-MMC version 5.1
F = e-MMC version 1.3
H = e-MMC version 1.8
J = e-MMC version 5.0
K = e-MMC version 4.2
L = e-MMC version 4.2/4.3
M = e-MMC version 4.2/4.3
N = e-MMC version 4.4
P = e-MMC version 4.4
Q = e-MMC version 4.4
R = e-MMC version 4.41
S = e-MMC version 4.41
T = e-MMC version 4.41
U = e-MMC version 4.41
V = e-MMC version 4.5
W = e-MMC version 4.5
X = e-MMC version 4.41
Y = e-MMC version 5.0
*Z
X Operating Voltage Range A = NAND: Vcc=N/A; LPDRAM: Vdd=1.8V, Vddq=1.8V;
e-MMC: Vccm=1.8V, Vccqm=1.8V
B = NAND: Vcc=1.8V; LPDRAM: Vdd=1.8V, Vddq=1.2V;
e-MMC: Vccm=1.8V, Vccqm=1.8V
C = NAND: Vcc=1.8V; LPDRAM: Vdd=1.35V, Vddq=1.2V;
e-MMC: Vccm=1.8V, Vccqm=1.8V
D = NAND: Vcc=1.8V; LPDRAM: Vdd=1.2V, Vddq=1.2V;
e-MMC: Vccm=1.8V, Vccqm=1.8V
E = NAND: Vcc=1.8; LPDRAM: Vdd=1.8V, Vddq=1.8V;
e-MMC: Vccm=3.3V, Vccqm=1.8/3.3V
F = NAND: Vcc=1.8V; LPDRAM: Vdd=1.8V, Vddq=1.8V;
e-MMC: Vccm=1.8V, Vccqm=1.8V
G = NAND: Vcc=N/A; LPDRAM: Vdd=1.8V, Vddq=1.8V;
e-MMC: Vccm=3.3V, Vccqm=1.8/3.3V
H = NAND: Vcc=1.8V; LPDRAM: Vdd=1.2V, Vddq=1.2V;
e-MMC: Vccm=N/A, Vccqm=N/A
J = NAND: Vcc=N/A; LPDRAM: Vdd=1.2V, Vddq=1.2V;
e-MMC: Vccm=1.8V, Vccqm=1.8V
K = NAND: Vcc=N/A; LPDRAM: Vdd=1.2V, Vddq=1.2V;
e-MMC: Vccm=3.3V, Vccqm=1.8/3.3V
L = NAND: Vcc=N/A; LPDRAM: Vdd=N/A, Vddq=1.2V;
e-MMC: Vccm=1.8V, Vccqm=1.8/3.3V
M = NAND: Vcc=1.8V; LPDRAM: Vdd=1.8V, Vddq=1.2V;
e-MMC: Vccm=1.8V, Vccqm=N/A
N = NAND: Vcc=3.3V; LPDRAM: Vdd=1.2V, Vddq=1.2V;
e-MMC: Vccm=N/A, Vccqm=N/A
P = NAND: VCC=N/A; LPDRAM: VDD=1.1V, VDDQ=1.1V,
e-MMC: VCCM=3.3V, VCCQM = 1.8V
Q = NAND: VCC=N/A; LPDRAM: VDD=1.1V, VDDQ=0.6V,
e-MMC: VCCM=3.3V, VCCQM = 1.8V
R = NAND: VCC=N/A; LPDRAM: VDD=1.1V, VDDQ=0.4V,
e-MMC: VCCM=3.3V, VCCQM = 1.8V
X Chip Count A = 1 NAND Flash (CE#0); 1 LPDRAM; 1 e-MMC
B = 2 NAND Flash (CE#0); 1 LPDRAM; 1 e-MMC
C = 1 NAND Flash (CE#0); 2 LPDRAM (CS0#0)/CS1#; 1 e-MMC
D = 2 NAND Flash (CE#0); 2 LPDRAM (CS0#/CS1#); 1 e-MMC
E = 0 NAND Flash; 1 LPDRAM; 1 e-MMC
F = 0 NAND Flash; 2 LPDRAM (CS0#/CS1#); 1 e-MMC
G = 1 NAND Flash; 1 LPDRAM; 0 e-MMC
H = 1 NAND Flash; 2 LPDRAM; 0 e-MMC
I = 2 NAND Flash; 2 LPDRAM; 0 e-MMC
J = 0 NAND Flash; 0 LPDRAM; 2 e-MMC
K = 0 NAND Flash; 4 LPDRAM; 1 e-MMC
L = 0 NAND Flash; 3 LPDRAM; 1 e-MMC
M = 2 NAND Flash; 1 LPDRAM; 0 e-MMC
N = 4 NAND Flash; 4 LPDRAM, 0 e-MMC
O = 0 NAND Flash, 6 LPDRAM; 1 e-MMC
XX Packge Code Contact factory
X LPDRAM Speed Grade 046 = 2133MHz (LPDDR 4266)
062 = 1600MHz (LPDDR 3200)
107 = 933MHz (LPDDR 1866)
125 = 800MHz (LPDDR1600)
18 = 533MHz CL8 (LPDDR 1066)
25 = 400MHz CL6 (LPDDR 800)
3 = 333MHz CL5 (LPDDR 667)
37 = 266MHz CL4 (LPDDR 533)
5 = 200MHz CL3 (LPDDR 400)
53 = 1866MHz (LPDDR 3732)
54 = 128MHz CL3 (LPDDR 1)
6 = 166MHz CL3 (LPDDR 333)
75 = 133MHz CL3 (LPDDR 266)
X Operating Temperature Range A = Automotive (-40°C to 105°C)
I = Industrial (-40°C to 85°C)
W = Wireless (-25°C to 85°C)
X Special Options Blank = Standard
A = Customer variant
B = 2MB boot area / 2MB RPMB
E = On-die ECC enabled
F = SEC COUNT / custom boot area / custom RPBM
XX Production Status Blank = Production
ES = Engineering samples
MS = Mechanical samples
.    
XXX Die Revision Code Contact factory

Note: Part number description table describes usual part-numbering system for more chips, therefore this table can contain information, that might not be valid for the actually selected chip. The information here are provided on the best-effort basis and might be either inaccurate or incoplete. Therefore always check the latest datasheet of the chip for part number description detail. If you find some inaccuracy, let us please know.

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Supported by programmers and programming adapters/modules:

BeeHive204 adapter/module: DIL48/BGA221-1.01 ZIF eMMC-1 (70-3981)
BeeHive208S adapter/module: DIL48/BGA221-1.01 ZIF eMMC-1 (70-3981)
BeeHive304 adapter/module: AP3 BGA221-1.01 eMMC-1 (73-3571)
BeeProg2 adapter/module: DIL48/BGA221-1.01 ZIF eMMC-1 (70-3981)
BeeProg2C adapter/module: DIL48/BGA221-1.01 ZIF eMMC-1 (70-3981)
BeeProg3 adapter/module: AP3 BGA221-1.01 eMMC-1 (73-3571)
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